SPP80N06S2L-11 Infineon Technologies, SPP80N06S2L-11 Datasheet - Page 4
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SPP80N06S2L-11
Manufacturer Part Number
SPP80N06S2L-11
Description
MOSFET N-CH 55V 80A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.SPB80N06S2L-11.pdf
(8 pages)
Specifications of SPP80N06S2L-11
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 93µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
2650pF @ 25V
Power - Max
158W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000013584
SPP80N06S2L11
SPP80N06S2L11
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPP80N06S2L-11
Manufacturer:
INFINEON
Quantity:
35 000
Company:
Part Number:
SPP80N06S2L-11
Manufacturer:
MAXIM
Quantity:
2 300
1 Power dissipation
P
parameter: V
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
= f (T
10
10
10
10
170
140
120
100
W
A
80
60
40
20
0
3
2
1
0
10
0
SPP80N06S2L-11
SPP80N06S2L-11
DS
-1
C
20
)
)
GS
40
60
4 V
10
0
C
80
= 25 °C
100 120 140 160
10
1
V
T
V
t
p
°C
C
= 13.0µs
DS
100 µs
1 ms
190
10
Page 4
2
2 Drain current
I
parameter: V
4 Max. transient thermal impedance
Z
parameter : D = t
D
thJC
= f (T
K/W
10
10
10
10
10
10
10
A
90
70
60
50
40
30
20
10
SPP80N06S2L-11,SPB80N06S2L-11
0
= f (t
-1
-2
-3
-4
-5
0
1
0
10
C
SPP80N06S2L-11
SPP80N06S2L-11
)
-7
20
p
)
10
single pulse
GS
40
-6
10
p
10 V
60
/T
-5
80
10
-4
100 120 140 160
SPI80N06S2L-11
10
-3
10
2004-11-02
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
t
s
°C
p
C
190
10
0