SPB80N04S2-04 Infineon Technologies, SPB80N04S2-04 Datasheet - Page 3

• Manufacturer Part Number: SPB80N04S2-04
• Description: MOSFET N-CH 40V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N04S2-04

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 6980pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000016353; SPB80N04S204T

Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
Symbol
S
SM
rr
d(on)
r
d(off)
f
fs
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
Page 3
V
I
V
f=1MHz
V
I
R
V
V
V
T
V
V
di
D
D
C
GS
R
DD
DD
GS
DD
DS
GS
DD
G
F
=80A
=80A,
=25°C
=20V, I
/dt=100A/µs
=2.2
=0V, I
=0V, V
=20V, V
=32V, I
=32V, I
=0 to 10V
Conditions
= 32 V , I
2*I
D
*R
F =
F
DS
D
D
=80A
DS(on)max
l
GS
=80A
=80A,
S
SPP80N04S2-04,SPB80N04S2-04
D
=25V,
,
=10V,
=80A
,
min.
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
5250
1870
typ.
125
420
135
100
5.3
0.9
60
16
45
50
40
25
50
SPI80N04S2-04
-
-
2004-05-24
max.
6980 pF
2490
630
170
320
125
1.3
80
75
24
68
75
60
35
75
-
-
Unit
S
ns
nC
V
A
V
ns
nC