SPB80N04S2-04 Infineon Technologies, SPB80N04S2-04 Datasheet - Page 2
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SPB80N04S2-04
Manufacturer Part Number
SPB80N04S2-04
Description
MOSFET N-CH 40V 80A D2PAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.SPB80N04S2-04.pdf
(8 pages)
Specifications of SPB80N04S2-04
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.4 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
6980pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000016353
SPB80N04S204T
SPB80N04S204T
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPB80N04S2-04
Manufacturer:
infineon
Quantity:
1 641
Company:
Part Number:
SPB80N04S2-04
Manufacturer:
INFINEON
Quantity:
11 368
Part Number:
SPB80N04S2-04
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
V
1 Current limited by bondwire ; with an R
information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test.
3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4 Diagrams are related to straight lead versions
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
=250µA
=40V, V
=40V, V
=0V, I
=20V, V
=10V, I
=10V, I
2
cooling area
D
D
D
=1mA
GS
GS
DS
=80A
=80A,
=0V, T
=0V, T j =125°C
=0V
SMD version
j
=25°C
3)
2)
GS
= V
j
DS
thJC
= 25 °C, unless otherwise specified
4)
= 0.5K/W the chip is able to carry I
Page 2
Symbol
V
V
I
I
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
thJC
thJA
thJA
SPP80N04S2-04,SPB80N04S2-04
min.
min.
2.1
40
-
-
-
-
-
-
-
-
-
D
= 208A at 25°C, for detailed
Values
Values
0.01
typ.
typ.
2.7
0.3
3
1
3
1
-
-
-
-
SPI80N04S2-04
max.
max.
100
100
3.7
3.4
0.5
62
62
40
2004-05-24
1
4
-
Unit
V
µA
nA
m
Unit
K/W