SPB70N10L Infineon Technologies, SPB70N10L Datasheet - Page 7

• Manufacturer Part Number: SPB70N10L
• Description: MOSFET N-CH 100V 70A D2PAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPB70N10L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 2V @ 2mA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 4540pF @ 25V
• Power - Max: 250W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000012079; SPB70N10LT

13 Typ. avalanche energy
E
par.: I
15 Drain-source breakdown voltage
V
AS
(BR)DSS
mJ
= f (T
700
600
550
500
450
400
350
300
250
200
150
100
120
114
112
110
108
106
104
102
100
V
50
98
96
94
92
90
D
0
-60
25
= 70 A , V
SPP70N10L
= f (T
j
)
45
-20
j
65
)
20
DD
85
= 25 V, R
60
105
100
125
GS
145
140
= 25
°C
°C
T
T
j
j
185
200
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
SPP70N10L
Gate
40
D
= 70 A pulsed
)
0,2
80
V
SPP70N10L,SPB70N10L
DS max
120
0,8 V
160
DS max
200
2005-01-12
SPI70N10L
nC
Q
Gate
280