SPB70N10L Infineon Technologies, SPB70N10L Datasheet - Page 5
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SPB70N10L
Manufacturer Part Number
SPB70N10L
Description
MOSFET N-CH 100V 70A D2PAK
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.SPB70N10L.pdf
(8 pages)
Specifications of SPB70N10L
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
2V @ 2mA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
4540pF @ 25V
Power - Max
250W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000012079
SPB70N10LT
SPB70N10LT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPB70N10L
Manufacturer:
INF
Quantity:
305
5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
170
140
120
100
A
A
80
60
40
20
70
60
55
50
45
40
35
30
25
20
15
10
0
5
0
0
0
DS
SPP70N10L
GS
P
tot
0.5
); T
); V
= 250W
p
p
1
= 80 µs
= 80 µs
1
j
DS
=25°C
l
1.5
k
j
i
h
2 x I
g
2
f
2
D
2.5
e
x R
3
3
DS(on)max
3.5
c
a
4
d
b
V GS [V]
a
b
c
d
e
f
g
h
i
j
k
l
4
V
V
V
V
GS
DS
10.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
8.0
5.5
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m
= f(I
S
80
60
50
40
30
20
10
60
50
45
40
35
30
25
20
15
10
0
5
0
0
0
D
SPP70N10L
= f (I
V
); T
GS
3.0
b
[V] =
j
3.5
20
c
=25°C
D
fs
GS
10
)
4.0
d
b
40
4.5
e
SPP70N10L,SPB70N10L
20
5.0
f
60
5.5
g
30
6.0
c
h
80
6.5
i
2005-01-12
40
SPI70N10L
7.0
j
100
8.0
k
A
A
d
I
I
k
D
D
10.0
g
l
i
e
l
h
j
f
130
55