IPP80N06S3L-05 Infineon Technologies, IPP80N06S3L-05 Datasheet - Page 7

• Manufacturer Part Number: IPP80N06S3L-05
• Description: MOSFET N-CH 55V 80A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP80N06S3L-05

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 69A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.2V @ 115µA
• Gate Charge (qg) @ Vgs: 273nC @ 10V
• Input Capacitance (ciss) @ Vds: 13060pF @ 25V
• Power - Max: 165W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPP80N06S3L-05; IPP80N06S3L-05IN; IPP80N06S3L05X; IPP80N06S3L05XK; SP000102206

Rev. 1.1
13 Typical avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
1800
1600
1400
1200
1000
= f(T
= f(Q
800
600
400
200
12
10
8
6
4
2
0
0
0
0
j
)
80 A
gate
40 A
20 A
D
); I
DD
D
50
= 80 A pulsed
50
100
Q
T
gate
100
j
[°C]
[nC]
150
11 V
150
200
44 V
250
200
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
V
V
66
64
62
60
58
56
54
52
50
48
46
GS
GS
-60
= f(T
Q
Q
gs
gs
j
IPI80N06S3L-05, IPP80N06S3L-05
); I
-20
D
= 1 mA
Q
Q
20
g
g
T
Q
Q
j
gd
gd
60
[°C]
IPB80N06S3L-05
100
Q
Q
gate
gate
140
2007-11-07
180