IPP80N06S3L-05 Infineon Technologies, IPP80N06S3L-05 Datasheet - Page 5

• Manufacturer Part Number: IPP80N06S3L-05
• Description: MOSFET N-CH 55V 80A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP80N06S3L-05

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 69A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.2V @ 115µA
• Gate Charge (qg) @ Vgs: 273nC @ 10V
• Input Capacitance (ciss) @ Vds: 13060pF @ 25V
• Power - Max: 165W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPP80N06S3L-05; IPP80N06S3L-05IN; IPP80N06S3L05X; IPP80N06S3L05XK; SP000102206

Rev. 1.1
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
300
200
100
200
150
100
50
0
0
DS
GS
0
1
); T
); V
GS
j
j
DS
= 25 °C
10 V
= 4V
1
2
6 V
2
V
V
DS
GS
3
[V]
[V]
3
5 V
4.5 V
4 V
3.5 V
3 V
4
4
-55 °C
25 °C
175 °C
page 5
5
5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
15
10
5
0
7
6
5
4
3
2
= f(I
= f(T
-60
0
D
j
); T
); I
GS
IPI80N06S3L-05, IPP80N06S3L-05
3.5 V
-20
D
j
= 25 °C
= 80 A; V
50
20
4 V
GS
T
I
D
j
60
= 10 V
[°C]
[A]
IPB80N06S3L-05
100
100
4.5 V
140
2007-11-07
6 V
10 V
5 V
150
180