IPP12CNE8N G Infineon Technologies, IPP12CNE8N G Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
IPP12CNE8N G
Manufacturer Part Number
IPP12CNE8N G
Description
MOSFET N-CH 85V 67A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPP12CNE8N_G.pdf
(12 pages)
Specifications of IPP12CNE8N G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12.9 mOhm @ 67A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
67A
Vgs(th) (max) @ Id
4V @ 83µA
Gate Charge (qg) @ Vgs
64nC @ 10V
Input Capacitance (ciss) @ Vds
4340pF @ 40V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0129 Ohms
Drain-source Breakdown Voltage
85 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
67 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPP12CNE8NGX
IPP12CNE8NGXK
SP000096467
IPP12CNE8NGXK
SP000096467
Rev. 1.05
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
140
120
100
10
10
10
10
10
80
60
40
20
DS
0
-1
3
2
1
0
C
10
0
); T
)
-1
C
p
=25 °C; D =0
50
10
0
T
V
C
DS
100
[°C]
DC
[V]
10
10 ms
100 μs
1
1 ms
150
10 μs
1 μs
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
=f(t
10
10
10
10
70
60
50
40
30
20
10
C
0
-1
-2
1
0
); V
10
p
0
0.01
)
0.02
-5
0.05
0.2
0.5
0.1
GS
single pulse
10 V
IPB12CNE8N G
p
10
IPI12CNE8N G
/T
-4
50
10
T
-3
t
C
100
p
[°C]
[s]
10
-2
IPD12CNE8N G
IPP12CNE8N G
150
10
-1
2007-08-29
200
10
0