IPP12CNE8N G Infineon Technologies, IPP12CNE8N G Datasheet - Page 4

• Manufacturer Part Number: IPP12CNE8N G
• Description: MOSFET N-CH 85V 67A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP12CNE8N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 67A
• Vgs(th) (max) @ Id: 4V @ 83µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 4340pF @ 40V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0129 Ohms
• Drain-source Breakdown Voltage: 85 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 67 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPP12CNE8NGX; IPP12CNE8NGXK; SP000096467

Rev. 1.05
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
140
120
100
10
10
10
10
10
80
60
40
20
DS
0
-1
3
2
1
0
C
10
0
); T
)
-1
C
p
=25 °C; D =0
50
10
0
T
V
C
DS
100
[°C]
DC
[V]
10
10 ms
100 μs
1
1 ms
150
10 μs
1 μs
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
=f(t
10
10
10
10
70
60
50
40
30
20
10
C
0
-1
-2
1
0
); V
10
p
0
0.01
)
0.02
-5
0.05
0.2
0.5
0.1
GS
single pulse
10 V
IPB12CNE8N G
p
10
IPI12CNE8N G
/T
-4
50
10
T
-3
t
C
100
p
[°C]
[s]
10
-2
IPD12CNE8N G
IPP12CNE8N G
150
10
-1
2007-08-29
200
10
0