IPP12CNE8N G Infineon Technologies, IPP12CNE8N G Datasheet
IPP12CNE8N G
Specifications of IPP12CNE8N G
IPP12CNE8NGXK
SP000096467
Related parts for IPP12CNE8N G
IPP12CNE8N G Summary of contents
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... = /dt di /dt =100 A/μs, T =175 °C j,max =25 °C tot stg page 1 IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary (TO252) DS(on),max I D IPI12CNE8N G IPP12CNE8N G PG-TO262-3 PG-TO220-3 12CNE8N 12CNE8N Value 67 48 268 =25 154 = ±20 125 -55 ... 175 55/175/ 12 Unit A mJ kV/μ °C 2007-08-29 ...
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... V = =125 ° = GSS = = DS(on) (TO252 (TO262 (TO220, TO263 |>2 DS(on)max = (one layer, 70 μm thick) copper area for drain connection. PCB is page 2 IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Values min. typ. max 1 0 100 - 1 100 - 9.2 12.4 - 9.4 12.6 - 9.7 12 Unit K/W V μ ...
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... See figure 16 for gate charge parameter definition Rev. 1.05 Symbol Conditions C iss oss f =1 MHz C rss t d(on = =33 d(off = plateau oss =25 ° S,pulse = =25 ° = /dt =100 A/μ page 3 IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Values min. typ. max. - 3260 4340 = 608 809 - = =1 =100 5 268 - 1 1.2 - 103 , S - 255 Unit 2007-08-29 ...
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... DS C parameter Rev. 1.05 2 Drain current I =f(T D 100 150 200 T [° Max. transient thermal impedance Z =f(t thJC parameter μs 10 μs 100 μ [V] DS page 4 IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N 100 T [° 0.5 0.2 0.1 -1 0.05 0.02 0.01 single pulse - [s] p 150 200 - ...
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... Typ. transfer characteristics I =f |>2 DS(on)max parameter 250 200 150 100 Rev. 1.05 6 Typ. drain-source on resistance R DS(on) parameter 6 [ Typ. forward transconductance g =f(I fs 175 °C 25 ° [V] GS page 5 IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N =f(I =25 ° 5 [ =25 ° 100 [ 2007-08-29 ...
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... Crss Rev. 1.05 10 Typ. gate threshold voltage V =10 V GS(th) parameter: I typ 60 100 140 180 T [° Forward characteristics of reverse diode I =f(V F parameter [V] DS page 6 IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N =f 3.5 830 μ μA 2.5 2 1.5 1 0.5 0 -60 - 100 T [° 175 ° °C, 98% ...
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... Drain-source breakdown voltage =f BR(DSS 100 -60 -20 20 Rev. 1.05 14 Typ. gate charge V =f(Q GS parameter °C 100 °C 100 1000 t [μ Gate charge waveforms 60 100 140 180 T [°C] j page 7 IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N =67 A pulsed gate [nC] gate s(th g(th ate 2007-08-29 ...
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... PG-TO220-3: Outline Rev. 1.05 IPB12CNE8N G IPI12CNE8N G page 8 IPD12CNE8N G IPP12CNE8N G 2007-08-29 ...
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... Rev. 1.05 IPB12CNE8N G IPI12CNE8N G page 9 IPD12CNE8N G IPP12CNE8N G 2007-08-29 ...
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... PG-TO-263-3 (D²-Pak) Rev. 1.05 IPB12CNE8N G IPI12CNE8N G page 10 IPD12CNE8N G IPP12CNE8N G 2007-08-29 ...
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... PG-TO252-3: Outline Rev. 1.05 IPB12CNE8N G IPI12CNE8N G page 11 IPD12CNE8N G IPP12CNE8N G 2007-08-29 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.05 IPB12CNE8N G IPI12CNE8N G page 12 IPD12CNE8N G IPP12CNE8N G 2007-08-29 ...