BUZ32 H3045A Infineon Technologies, BUZ32 H3045A Datasheet - Page 8

• Manufacturer Part Number: BUZ32 H3045A
• Description: MOSFET N-CH 200V 9.5A TO-263
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ32 H3045A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: BUZ32 L3045A; BUZ32 L3045A; BUZ32H3045AIN; BUZ32L3045AIN; BUZ32L3045AIN; BUZ32L3045AXT; SP000102174; SP000736086

Avalanche energy E
parameter: I
R
Drain-source breakdown voltage
V
V
Rev. 2.3
(BR)DSS
E
(BR)DSS
GS
AS
= 25 Ω , L = 2 mH
240
225
220
215
210
130
110
100
230
205
200
195
190
185
180
mJ
90
80
70
60
50
40
30
20
10
V
0
-60
20
= ƒ ( T
D
40
= 9.5 A, V
-20
j
)
60
20
AS
80
DD
= ƒ ( T
= 50 V
60
100
j
)
120
100
T
˚C
T
˚C
j
j
160
160
Page 8
Typ. gate charge
V
parameter: I
V
GS
GS
= ƒ ( Q
16
12
10
V
8
6
4
2
0
0
Gate
D puls
4
)
8
= 14 A
0,2
12
V
DS max
16
20
24
28
2009-04-08
0,8
BUZ 32
32 nC 38
V
Q
DS max
Gate