BUZ32 H3045A Infineon Technologies, BUZ32 H3045A Datasheet - Page 5

• Manufacturer Part Number: BUZ32 H3045A
• Description: MOSFET N-CH 200V 9.5A TO-263
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ32 H3045A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: BUZ32 L3045A; BUZ32 L3045A; BUZ32H3045AIN; BUZ32L3045AIN; BUZ32L3045AIN; BUZ32L3045AXT; SP000102174; SP000736086

Power dissipation
P
P
Safe operating area
I
parameter: D = 0.01 , T
Rev. 2.3
D
tot
I
tot
D
= ƒ ( V
= ƒ ( T
10
10
10
10
80
60
50
40
30
20
10
W
A
-1
0
2
1
0
DS
10
0
C
0
)
)
20
40
10
60
1
C
= 25˚C
80
100
10
DC
2
120
t p = 7.6µs
10 µs
100 µs
1 ms
10 ms
V
T
˚C
C
DS
V
160
Page 5
Transient thermal impedance
Z
parameter: D = t
Z
Drain current
I
parameter: V
D
thJC
I
th JC
D
= ƒ ( T
K/W
10
10
10
10
10
= ƒ ( t
10
-1
-2
-3
A
0
8
7
6
5
4
3
2
1
0
1
10
C
0
)
-7
p
)
20
10
single pulse
GS
-6
p
≥ 10 V
40
/ T
10
-5
60
10
-4
80
10
100
-3
10
120
-2
D = 0.50
2009-04-08
BUZ 32
10
0.20
t
0.10
0.05
0.02
0.01
p
T
˚C
C
-1
s
160
10
0