BSS159N E6327 Infineon Technologies, BSS159N E6327 Datasheet - Page 8

• Manufacturer Part Number: BSS159N E6327
• Description: MOSFET N-CH 60V 230MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS159N E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 230mA
• Vgs(th) (max) @ Id: 2.4V @ 26µA
• Gate Charge (qg) @ Vgs: 2.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 44pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 230mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 3.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: -2.8V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSS159NE6327XT; SP000014638

BSS159N
Package Outline:
Footprint:
Packaging:
Dimensions in mm
Rev. 1.32
page 8
2006-12-11