BSS159N E6327 Infineon Technologies, BSS159N E6327 Datasheet - Page 5

• Manufacturer Part Number: BSS159N E6327
• Description: MOSFET N-CH 60V 230MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS159N E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 230mA
• Vgs(th) (max) @ Id: 2.4V @ 26µA
• Gate Charge (qg) @ Vgs: 2.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 44pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 230mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 3.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: -2.8V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSS159NE6327XT; SP000014638

Rev. 1.32
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
0.6
0.5
0.4
0.3
0.2
0.1
0.6
0.5
0.4
0.3
0.2
0.1
DS
0
GS
0
-4
); T
0
); |V
10 V
j
=25 °C
GS
DS
|>2|I
1 V
-3
2
D
|R
DS(on)max
-2
4
V
V
DS
GS
[V]
[V]
-1
6
-0.1 V
-0.2 V
0.1 V
0.5 V
0 V
0.2 V
8
0
10
page 5
1
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
0.25
0.15
0.05
0.3
0.2
0.1
10
D
0
=f(I
8
6
4
2
0
0.00
); T
0
D
j
); T
=25 °C
GS
0.1
j
=25 °C
0.10
0.2
-0.2 V
-0.1 V
I
I
D
D
0.3
0 V
[A]
[A]
1 V
10 V
0.1 V
0.2 V
0.20
0.4
0.5 V
BSS159N
0.5
2006-12-11
0.30
0.6