BSS139 E6327 Infineon Technologies, BSS139 E6327 Datasheet - Page 6

• Manufacturer Part Number: BSS139 E6327
• Description: MOSFET N-CH 250V 100MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS139 E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1V @ 56µA
• Gate Charge (qg) @ Vgs: 3.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 76pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS139E6327XT; SP000011170

Rev. 1.62
9 Drain-source on-state resistance
R
11 Threshold voltage bands
I
D
DS(on)
=f(V
0.01
0.1
10
60
50
40
30
20
10
1
=f(T
GS
0
-60
-2
); V
j
); I
DS
D
-20
=3 V; T
=0.015 A; V
N
-1.5
20
j
=25 °C
%98
M
V
GS
L
T
GS
j
[V]
60
[°C]
=0 V
typ
K
100
-1
J
140
56 µA
180
-0.5
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Typ. capacitances
C =f(V
GS(th)
1000
-0.5
-1.5
-2.5
100
10
-1
-2
-3
=f(T
DS
0
1
-60
); V
0
j
); V
D
GS
-20
=-3 V; f =1 MHz
DS
5
=3 V; I
20
10
D
=56 µA
V
T
DS
j
60
15
[°C]
%98
[V]
typ
%2
100
20
140
25
BSS139
Ciss
Crss
Coss
2006-11-27
180
30