BSS123 E7874 Infineon Technologies, BSS123 E7874 Datasheet - Page 4

• Manufacturer Part Number: BSS123 E7874
• Description: MOSFET N-CH 100V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS123 E7874

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 1.8V @ 50µA
• Gate Charge (qg) @ Vgs: 2.67nC @ 10V
• Input Capacitance (ciss) @ Vds: 69pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS123E7874T; BSS123L7874XT; SP000011167

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
10
10
10
0.38
0.32
0.28
0.24
0.16
0.12
0.08
0.04
10
10
= f ( T
W
0.2
A
-1
-2
-3
0
1
0
10
0
BSS123
BSS123
0
DS
A
20
)
)
40
10
60
1
A
= 25 °C
80
DC
100
t p = 120.0µs
10
1 ms
10 ms
2
120
°C
V
T
V
Rev. 1.41
A
DS
160
10
Page 4
3
2 Drain current
I
parameter: V
4 Transient thermal impedance
Z
parameter : D = t
D
thJA
= f ( T
K/W
10
10
10
0.18
0.14
0.12
0.08
0.06
0.04
0.02
10
10
10
10
0.1
A
= f (t
-1
-2
-3
0
3
2
1
0
10
0
BSS123
BSS123
A
-7
)
p
20
10
)
single pulse
GS
-6
40
10
p
10 V
/T
-5
60
10
-4
80
10
100
-3
10
2010-05-12
120
-2
D = 0.50
BSS123
°C
0.20
0.10
0.05
0.02
0.01
T
t
s
p
A
160
10
0