BSP149 E6327 Infineon Technologies, BSP149 E6327 Datasheet - Page 5

• Manufacturer Part Number: BSP149 E6327
• Description: MOSFET N-CH 200V 660MA SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP149 E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10v
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 660mA
• Vgs(th) (max) @ Id: 1V @ 400µA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 430pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP149E6327T; SP000011104

Rev. 1.2
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
0.8
0.6
0.4
0.2
1.6
1.2
0.8
0.4
DS
GS
1
0
2
0
-2
); T
0
); |V
j
=25 °C
DS
GS
|>2|I
-1
2
V 10
D
|R
DS(on)max
4
0
V
V
DS
GS
[V]
[V]
6
1
V 0.2-
V 0
8
2
V 0.1-
V 0.2
V 0.1
V 0.5
V 1
10
3
page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
1.2
0.8
0.6
0.4
0.2
6
5
4
3
2
1
0
D
=f(I
1
0
); T
0.00
0
D
j
); T
=25 °C
GS
0.10
j
=25 °C
0.2
-0.2 V
0.20
-0.1 V
0.4
0 V
0.30
I
I
0.1 V
D
D
[A]
[A]
0.40
0.2 V
0.6
0.50
0.8
0.60
2005-11-28
BSP149
0.5 V
10 V
1 V
0.70
1