NTMS3P03R2G ON Semiconductor, NTMS3P03R2G Datasheet - Page 6

• Manufacturer Part Number: NTMS3P03R2G
• Description: MOSFET P-CH 30V 2.34A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMS3P03R2G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.34A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 24V
• Power - Max: 730mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.085 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 3.05 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMS3P03R2GOS

0.01
100
1.0
0.1
10
0.1
0.01
1.0
0.1
1E-03
V
SINGLE PULSE
T
Figure 12. Maximum Rated Forward Biased
A
GS
-V
= 25°C
0.2
0.1
0.05
0.02
D = 0.5
= 12 V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
R
THERMAL LIMIT
PACKAGE LIMIT
Single Pulse
DS(on)
Safe Operating Area
dc
1.0
1E-02
0.01
10 ms
10
1.0 ms
1E-01
Figure 14. FET Thermal Response
Chip
Junction 2.32 W
http://onsemi.com
NTMS3P03R2
0.0014 F
100
t, TIME (s)
6
1E+00
Normalized to R
0.0073 F
18.5 W
Figure 13. Diode Reverse Recovery Waveform
I
S
0.022 F
50.9 W
qJA
t
p
1E+01
at Steady State (1″ pad)
0.105 F
37.1 W
di/dt
t
a
t
rr
t
b
0.484 F
I
1E+02
S
56.8 W
0.25 I
S
3.68 F
24.4 W
Ambient
TIME
1E+03