NTMS3P03R2G ON Semiconductor, NTMS3P03R2G Datasheet - Page 5

• Manufacturer Part Number: NTMS3P03R2G
• Description: MOSFET P-CH 30V 2.34A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMS3P03R2G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.34A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 24V
• Power - Max: 730mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.085 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 3.05 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMS3P03R2GOS

10000
1000
1000
100
100
10
12
10
10
8
6
4
2
0
0
6
1
V
V
Q
Figure 10. Resistive Switching Time Variation
V
I
V
Figure 6. Drain-to-Source Leakage Current
D
DS
GS
1
Drain-to-Source Voltage vs. Total Charge
DS
GS
-V
= -1.5 A
= 0 V
2
= -24 V
= -4.5 V
DS
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 8. Gate-to-Source and
Q
4
g
R
, TOTAL GATE CHARGE (nC)
G
Q
vs. Gate Resistance
, GATE RESISTANCE (W)
14
2
6
vs. Voltage
T
T
J
J
= 150°C
= 125°C
18
Q
10
8
T
t
t
r
f
10
22
I
T
D
J
12
= -3.05 A
= 25°C
26
http://onsemi.com
V
14
NTMS3P03R2
GS
t
t
d(on)
d(off)
100
30
16
30
25
20
15
10
5
0
5
1200
1000
1000
800
600
400
200
100
2.5
1.5
0.5
10
0
1
3
2
1
0
10
0.2
1
Figure 11. Diode Forward Voltage vs. Current
T
Figure 9. Resistive Switching Time Variation
V
V
I
V
V
T
C
C
D
J
-V
DS
DS
GS
J
GS
-V
iss
rss
= 25°C
= -3.05 A
GATE-TO-SOURCE OR DRAIN-TO-SOURCE
GS
= 25°C
= 0 V
5
= -24 V
= -10 V
SD
= 0 V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
0.4
Figure 7. Capacitance Variation
0
R
G
vs. Gate Resistance
V
, GATE RESISTANCE (W)
GS
VOLTAGE (VOLTS)
= 0 V
5
-V
0.6
DS
t
t
d(off)
d(on)
t
f
10
C
10
C
C
iss
oss
rss
t
r
0.8
15
20
1
25
100
30
1.2