NTMS3P03R2G ON Semiconductor, NTMS3P03R2G Datasheet - Page 2

• Manufacturer Part Number: NTMS3P03R2G
• Description: MOSFET P-CH 30V 2.34A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMS3P03R2G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.34A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 24V
• Power - Max: 730mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.085 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 3.05 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMS3P03R2GOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Minimum FR-4 or G-10 PCB, t = steady state.
2. Mounted onto a 2″ square FR-4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t = steady state.
3. Mounted onto a 2″ square FR-4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
MAXIMUM RATINGS
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Thermal Resistance -
Thermal Resistance -
Thermal Resistance -
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy - Starting T
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
Junction-to-Ambient (Note 1)
Total Power Dissipation @ T
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
Junction-to-Ambient (Note 2)
Total Power Dissipation @ T
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
Junction-to-Ambient (Note 3)
Total Power Dissipation @ T
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
(V
DD
= -30 Vdc, V
GS
= -4.5 Vdc, Peak I
A
A
A
= 25°C
= 25°C
= 25°C
Rating
L
= -7.5 Apk, L = 5 mH, R
http://onsemi.com
NTMS3P03R2
J
= 25°C
2
G
= 25 W)
Symbol
T
V
R
R
R
J
V
E
I
I
I
P
P
P
DSS
DM
DM
DM
, T
T
I
I
I
I
I
I
qJA
qJA
qJA
GS
AS
D
D
D
D
D
D
D
D
D
L
stg
- 55 to +150
Value
-2.34
-1.87
-3.05
-2.44
-3.86
0.73
-8.0
1.25
62.5
-3.1
-30
±20
171
100
-12
-15
140
260
2.0
°C/W
°C/W
°C/W
Unit
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
A
A
A
A