NTF3055-160T1 ON Semiconductor, NTF3055-160T1 Datasheet - Page 3

• Manufacturer Part Number: NTF3055-160T1
• Description: MOSFET N-CH 60V 2A SOT223
• Manufacturer: ON Semiconductor

Specifications of NTF3055-160T1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTF3055-160T1OS

0.28
0.24
0.16
0.12
0.08
0.04
3.6
3.2
2.8
2.4
1.6
1.2
0.8
0.4
0.2
1.8
1.6
1.4
1.2
0.8
0.6
2
0
–50
0
2
1
0
0
V GS = 10 V
I D = 1 A
V GS = 10 V
V DS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
–25
V GS, GATE–TO–SOURCE VOLTAGE (VOLTS)
0.5
Figure 5. On–Resistance Variation with
0.4
Figure 1. On–Region Characteristics
Figure 3. On–Resistance versus
T J , JUNCTION TEMPERATURE ( C)
0
I D, DRAIN CURRENT (AMPS)
1
Gate–to–Source Voltage
0.8
V GS = 10 V
V GS = 8 V
25
1.5
Temperature
V GS = 6 V
V GS = 7 V
1.2
T J = 100 C
T J = –55 C
T J = 25 C
50
2
75
1.6
2.5
100
2
3
V GS = 5.5 V
V GS = 4.5 V
V GS = 5 V
125
2.4
3.5
http://onsemi.com
150
NTF3055–160
2.8
175
4
3
1000
0.28
0.24
0.16
0.12
0.08
0.04
100
2.8
2.4
1.6
1.2
0.8
0.4
0.2
10
1
2
0
0
0
3
0
Figure 4. On–Resistance versus Drain Current
V GS = 0 V
Figure 6. Drain–to–Source Leakage Current
V GS = 15 V
V DS
V DS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
3.4
V GS, GATE–TO–SOURCE VOLTAGE (VOLTS)
0.5
T J = 100 C
Figure 2. Transfer Characteristics
10
10 V
3.8
I D, DRAIN CURRENT (AMPS)
1
T J = 25 C
20
and Gate Voltage
versus Voltage
4.2
1.5
T J = 150 C
T J = 125 C
T J = 100 C
T J = 25 C
4.6
30
2
T J = –55 C
2.5
5
40
5.4
3
50
3.5
5.8
6.2
60
4