BSO303SP Infineon Technologies, BSO303SP Datasheet - Page 7

• Manufacturer Part Number: BSO303SP
• Description: MOSFET P-CH 30V 8.9A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO303SP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.9A
• Vgs(th) (max) @ Id: 2V @ 100µA
• Gate Charge (qg) @ Vgs: 69nC @ 10V
• Input Capacitance (ciss) @ Vds: 1754pF @ 25V
• Power - Max: 2.35W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 31 m Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 8.9 A
• Power Dissipation: 2.35 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO303SPINTR

13 Typ. avalanche energy
E
V
15 Drain-source breakdown voltage
V
AS
DD
(BR)DSS
Rev.1.2
mJ
100
= f (T
-36
-34
-33
-32
-31
-30
-29
-28
-27
= -25 V, R
V
80
70
60
50
40
30
20
10
0
-60
25
BSO303SP
j
= f (T
), par.: I
-20
50
GS
j
)
20
D
= 25 Ω
= -8.9 A
75
60
100
100
°C
°C
T
T
j
j
180
150
Page 7
14 Typ. gate charge
V
parameter: I
GS
-16
-12
-10
= f (Q
V
-8
-6
-4
-2
0
0
BSO303SP
0.2 V
0.5 V
0.8 V
Gate
10
DS max
DS max
DS max
D
= -8.9 A pulsed
)
20
30
40
50
BSO303SP
2002-01-08
nC
|Q
Gate
70
|