SPD07N60S5 Infineon Technologies, SPD07N60S5 Datasheet - Page 8

• Manufacturer Part Number: SPD07N60S5
• Description: MOSFET N-CH 600V 7.3A DPAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD07N60S5

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 5.5V @ 350µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 970pF @ 25V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.3 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
• Other names: SP000313948; SPD07N60S5INTR

13 Avalanche power losses
P
parameter: E
15 Typ. C
E
Rev. 2.5
AR
oss
µJ
W
300
200
150
100
= f ( V
= f ( f )
5.5
4.5
3.5
2.5
1.5
0.5
50
0
4
3
2
1
0
10
0
4
DS
oss
)
100
AR
stored energy
=0.5mJ
200
300
10
5
400
MHz
V
f
V
DS
600
10
Page 8
6
14 Typ. capacitances
C = f ( V
parameter: V
pF
10
10
10
10
10
4
3
2
1
0
0
DS
)
C
100
rss
GS
=0V, f=1 MHz
200
300
C
C
iss
oss
SPU07N60S5
SPD07N60S5
400
2008-04-10
V
V
DS
600