SPD07N60S5 Infineon Technologies, SPD07N60S5 Datasheet - Page 7

• Manufacturer Part Number: SPD07N60S5
• Description: MOSFET N-CH 600V 7.3A DPAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD07N60S5

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 5.5V @ 350µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 970pF @ 25V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.3 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
• Other names: SP000313948; SPD07N60S5INTR

9 Forward characteristics of body diode
I
parameter: T j , t
11 Avalanche energy
E
par.: I
Rev. 2.5
F
AS
= f (V
mJ
10
10
10
10
260
220
200
180
160
140
120
100
= f ( T
A
80
60
40
20
-1
D
0
2
1
0
20
0
SPU07N60S5
= - A, V
SD
j
)
)
0.4
40
0.8
DD
p
60
= 10 µs
= 50 V
1.2
T
T
T
T
80
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
1.6
100
2
120
2.4
°C
V
T
V
j
SD
160
3
Page 7
10 Avalanche SOA
I
par.: T
12 Drain-source breakdown voltage
V
AR
(BR)DSS
= f (t
720
680
660
640
620
600
580
560
540
A
V
8
6
5
4
3
2
1
0
-60
10
j
≤ 150 °C
SPU07N60S5
AR
-3
= f ( T
)
10
-20
-2
j
)
10
T
j (START)
20
-1
=125°C
10
0
60
10
SPU07N60S5
SPD07N60S5
1
100
10
2008-04-10
T
2
j (START)
°C
=25°C
t
T
µs
AR
j
180
10
4