BSP296E6327 Infineon Technologies, BSP296E6327 Datasheet - Page 7
![MOSFET N-CH 100V 1.1A SOT223](/photos/5/51/55179/448-sot-223_sml.jpg)
BSP296E6327
Manufacturer Part Number
BSP296E6327
Description
MOSFET N-CH 100V 1.1A SOT223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSP296_L6433.pdf
(8 pages)
Specifications of BSP296E6327
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
700 mOhm @ 1.1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.1A
Vgs(th) (max) @ Id
1.8V @ 400µA
Gate Charge (qg) @ Vgs
17.2nC @ 10V
Input Capacitance (ciss) @ Vds
364pF @ 25V
Power - Max
1.79W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSP296
BSP296INTR
SP000011106
BSP296INTR
SP000011106
13 Typ. gate charge
V
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
BSP296
0.2 V
0.5 V
0.8 V
I
2
D
G
DS max
DS max
DS max
= 1.1 A pulsed, T
); parameter: V
4
6
8
10 12 14 16 18 nC 21
DS
j
= 25 °C
,
Q
Rev. 2.1
G
Page 7
14 Drain-source breakdown voltage
V
(BR)DSS
120
114
112
110
108
106
104
102
100
V
98
96
94
92
90
-60
BSP296
= f ( T
-20
j
)
20
60
100
2009-08-18
BSP296
°C
T
j
180