BSP296E6327 Infineon Technologies, BSP296E6327 Datasheet - Page 4

• Manufacturer Part Number: BSP296E6327
• Description: MOSFET N-CH 100V 1.1A SOT223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP296E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 1.8V @ 400µA
• Gate Charge (qg) @ Vgs: 17.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 364pF @ 25V
• Power - Max: 1.79W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP296; BSP296INTR; SP000011106

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
10
10
10
10
= f ( T
W
1.9
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
-2
1
0
1
0
10
0
BSP296
BSP296
0
DS
A
20
)
)
40
10
60
1
A
= 25 °C
80
DC
100
t p = 120.0µs
10
1 ms
10 ms
2
120
°C
V
T
V
Rev. 2.1
A
DS
160
10
Page 4
3
2 Drain current
I
parameter: V
4 Transient thermal impedance
Z
parameter : D = t
D
thJA
= f ( T
K/W
10
10
10
10
10
10
10
1.3
A
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
= f (t
-1
-2
-3
-4
1
0
2
1
0
10
0
BSP296
BSP296
A
-7
)
p
20
10
)
single pulse
GS
-6
40
≥ 10 V
10
p
/T
-5
60
10
-4
80
10
100
-3
10
2009-08-18
120
-2
D = 0.50
BSP296
°C
0.20
0.10
0.05
0.02
0.01
T
t
s
p
A
160
10
0