SPW47N60C2 Infineon Technologies, SPW47N60C2 Datasheet - Page 4

• Manufacturer Part Number: SPW47N60C2
• Description: MOSFET N-CH 600V 47A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW47N60C2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 5.5V @ 2.7mA
• Gate Charge (qg) @ Vgs: 286nC @ 10V
• Input Capacitance (ciss) @ Vds: 8800pF @ 25V
• Power - Max: 415W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SPW47N60C2IN

Electrical Characteristics, at T
Parameter
Characteristics
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
Typical Transient Thermal Characteristics
Symbol
Thermal resistance
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
P
tot
(t)
0.002694
0.006036
0.00791
Value
0.023
0.035
0.018
typ.
T
j
C
th1
R
th1
j
= 25 °C, unless otherwise specified
Symbol
I
I
V
t
Q
I
di
S
SM
rr
rrm
SD
rr
rr
C
/dt
th2
Unit
K/W
Final data
Page 4
T
V
V
di
C
GS
R
F
C
=25°C
=350V, I
/dt=100A/µs
R
Symbol
Thermal capacitance
C
C
C
C
C
C
th,n
Conditions
=0V, I
th,n
th1
th2
th3
th4
th5
th6
F
T
=I
F
T
=I
case
am b
S
S
,
E xternal H eatsink
min.
0.001219
0.004011
0.006484
0.008028
-
-
-
-
-
-
-
Value
0.316
0.05
typ.
Values
2500
typ.
650
24
62
1
SPW47N60C2
-
-
2002-08-12
max.
1100 ns
1.2
47
94
-
-
-
Unit
Ws/K
Unit
A
V
µC
A
A/µs