SPW47N60C2 Infineon Technologies, SPW47N60C2 Datasheet

MOSFET N-CH 600V 47A TO-247

SPW47N60C2

Manufacturer Part Number
SPW47N60C2
Description
MOSFET N-CH 600V 47A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPW47N60C2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
70 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
47A
Vgs(th) (max) @ Id
5.5V @ 2.7mA
Gate Charge (qg) @ Vgs
286nC @ 10V
Input Capacitance (ciss) @ Vds
8800pF @ 25V
Power - Max
415W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification
Other names
SPW47N60C2IN

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPW47N60C2
Manufacturer:
ST
Quantity:
12 500
Part Number:
SPW47N60C2
Manufacturer:
ST
0
Feature
Cool MOS™ Power Transistor
Type
SPW47N60C2
Maximum Ratings, at T
Parameter
Continuous drain current
T
T
Pulsed drain current, t
Avalanche energy, single pulse
I
Avalanche energy, repetitive t
I
Avalanche current, repetitive t
Reverse diode dv/dt
I
Gate source voltage
Power dissipation,
Operating and storage temperature
D
D
S
C
C
Worldwide best R
New revolutionary high voltage technology
Periodic avalanche rated
Ultra low effective capacitances
Improved noise immunity
Ultra low gate charge
Extreme dv/dt rated
=47A, V
=10A, V
=20A, V
= 25 °C
= 100 °C
DD
DD
DS
=50V
=50V
V
DD
, di/dt=100A/µs, T
DS(on)
T
Package
P-TO247
C
= 25°C
p
in TO 247
limited by T
C
= 25°C, unless otherwise specified
AR
AR
jmax
limited by T
limited by T
=150°C
jmax
Ordering Code
Q67040-S4323
Final data
Page 1
jmax
jmax
1)
Symbol
I
I
E
E
I
dv/dt
V
P
T
Marking
47N60C2
D
D puls
AR
j ,
AS
AR
GS
tot
T
stg
Product Summary
V
R
I
D
-55... +150
DS
DS(on)
Value
1800
±20
415
47
30
94
20
P-TO247
SPW47N60C2
1
6
2002-08-12
0.07
600
47
Unit
A
mJ
A
V/ns
V
W
°C
V
A

Related parts for SPW47N60C2

SPW47N60C2 Summary of contents

Page 1

... DD Gate source voltage Power dissipation 25°C C Operating and storage temperature Final data Ordering Code Q67040-S4323 = 25°C, unless otherwise specified jmax 1) limited jmax limited jmax =150°C jmax Page 1 SPW47N60C2 Product Summary V 600 DS R 0.07 DS(on P-TO247 Marking 47N60C2 Symbol Value puls ...

Page 2

... Repetitve avalanche causes additional power losses that can be calculated as P Final data Symbol R thJC R thJA T sold = 25 °C, unless otherwise specified j V (BR)DSS V (BR) GS(th) I DSS I GSS R DS(on Page 2 SPW47N60C2 Values Unit min. typ. max 0.3 K 3.33 W 260 °C 600 - - V - 700 - 3.5 4 ...

Page 3

... I =47A =125° d(off =350V, I =47A =350V, I =47A 10V =350V, I =47A DD D (plateau) Page 3 SPW47N60C2 Values min. typ. max 8800 - 3150 - 36 - 233 - 470 - 28 =0/13V, - 9.5 - 103 - 9.6 14 123 - 220 286 - 8 while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V ...

Page 4

... V =350V /dt=100A/µ rrm di /dt rr Unit Symbol Thermal capacitance K/W C th1 C th2 C th3 C th4 C th5 C th6 th1 th th1 th2 th,n Page 4 SPW47N60C2 Values min. typ 650 = 2500 Value typ. 0.001219 0.004011 0.006484 0.008028 0.05 0.316 E xternal H eatsink T case Unit max 1.2 ...

Page 5

... thJC p parameter K Final data 2 Safe operating area parameter : °C 100 120 160 Typ. output characteristic parameter 0.01 single pulse - Page 5 SPW47N60C2 ) DS =25° 0.001 0. 0 =25° µ 220 A 20V 15V 180 12V 160 140 120 100 11V 10V 2002-08-12 ...

Page 6

... T j Page 6 SPW47N60C2 =f DS(on)max =150° µ 0.5 220 A 180 0.4 160 140 120 0.3 100 Gate = 47 A pulsed D SPW47N60C2 0,2 DS max 120 160 200 240 280 6V 6.5V 7V 7.5V 8V 8.5V 9V 10V 12V 20V 110 0 max 360 nC Q Gate 2002-08-12 ...

Page 7

... Final data 12 Typ. switching time par 2 Typ. switching losses =125° f(R j =1.8 par mWs E off 100 I D Page 7 SPW47N60C2 ), inductive load, T =125° =380V, V =0/+13V d(off inductive load, T =125° =380V, V =0/+13V includes SDP06S60 diode on commutation losses. 1 This chart helps to estimate the switching power losses ...

Page 8

... Final data 16 Avalanche energy E AS par.: I 2000 mJ 1600 1400 1200 1000 T =25°C j (START µ Avalanche power losses P AR parameter: E 100 °C 180 T j Page 8 SPW47N60C2 = 800 600 400 200 100 = =1mJ AR 500 W 300 200 100 °C 120 160 ...

Page 9

... Typ. capacitances parameter: V =0V, f=1 MHz rss 100 200 300 Definition of diodes switching characteristics Final data 20 Typ =f(V oss 40 µJ C iss oss 400 V 600 Page 9 SPW47N60C2 stored energy oss ) DS 100 200 300 400 2002-08-12 V 600 V DS ...

Page 10

... P-TO-247-3-1 15.9 6.35 ø3. 1.14 0.243 1.2 2 2.92 5.46 General tolerance unless otherwise specified: Leadframe parts: ±0.05 Final data 5.03 2.03 2.97 x 0.127 0.762 MAX. +0.05 2.4 Package parts: ±0.12 Page 10 SPW47N60C2 2002-08-12 ...

Page 11

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Final data Page 11 SPW47N60C2 2002-08-12 ...

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