SPW20N60S5 Infineon Technologies, SPW20N60S5 Datasheet - Page 8

• Manufacturer Part Number: SPW20N60S5
• Description: MOSFET N-CH 600V 20A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW20N60S5

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5.5V @ 1mA
• Gate Charge (qg) @ Vgs: 103nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 208W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000012463; SPW20N60S5IN; SPW20N60S5X; SPW20N60S5XTIN; SPW20N60S5XTIN

Please note the new package dimensions arccording to PCN 2009-134-A
13 Drain-source breakdown voltage
V
15 Typ. capacitances
C = f ( V
parameter: V
Rev. 2.5
(BR)DSS
pF
10
10
10
10
10
10
720
680
660
640
620
600
580
560
540
V
-60
5
4
3
2
1
0
0
SPW20N60S5
DS
= f ( T
)
C
100
-20
rss
GS
j
)
=0V, f=1 MHz
200
20
300
60
C
C
oss
iss
100
400
°C
V
T
V
j
DS
180
600
Page 8
14 Avalanche power losses
P
parameter: E
16 Typ. C
E
AR
oss
µJ
W
500
300
200
100
= f ( V
= f ( f )
14
12
11
10
0
9
8
7
6
5
4
3
2
1
0
10
0
4
DS
oss
)
100
AR
stored energy
=1mJ
200
300
10
5
SPW20N60S5
400
2008-02-12
Hz
V
f
V
DS
600
10
6