SPW20N60S5 Infineon Technologies, SPW20N60S5 Datasheet

MOSFET N-CH 600V 20A TO-247

SPW20N60S5

Manufacturer Part Number
SPW20N60S5
Description
MOSFET N-CH 600V 20A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPW20N60S5

Package / Case
TO-247-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5.5V @ 1mA
Gate Charge (qg) @ Vgs
103nC @ 10V
Input Capacitance (ciss) @ Vds
3000pF @ 25V
Power - Max
208W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
208000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000012463
SPW20N60S5IN
SPW20N60S5X
SPW20N60S5XTIN
SPW20N60S5XTIN

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Please note the new package dimensions arccording to PCN 2009-134-A
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
SPW20N60S5
Rev. 2.5
Maximum Ratings
Parameter
Continuous drain current
T
T
Pulsed drain current, t
Avalanche energy, single pulse
I
Avalanche energy, repetitive t
I
Avalanche current, repetitive t
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
Operating and storage temperature
D
D
C
C
= 10 A, V
= 20 A, V
= 25 °C
= 100 °C
DD
DD
= 50 V
= 50 V
T
C
Package
PG-TO247
= 25°C
p
limited by T
AR
AR
limited by T
limited by T
j ma x
Ordering Code
Q67040-S4238
Page 1
jmax
j ma x
1 )
Symbol
I
I
E
E
I
V
V
P
T
D
D p uls
AR
AS
AR
GS
GS
tot
j ,
T
st g
Marking
20N60S5
R
-55... +150
DS(on)
V
I
DS
D
Value
±20
± 30
690
208
20
13
40
20
1
SPW20N60S5
PG-TO247
2008-02-12
0.19
600
20
Unit
A
mJ
A
V
W
°C
V
A

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SPW20N60S5 Summary of contents

Page 1

... Operating and storage temperature Rev. 2.5 Please note the new package dimensions arccording to PCN 2009-134-A Ordering Code Marking Q67040-S4238 20N60S5 Symbol uls limited jmax limited tot Page 1 SPW20N60S5 600 Ω R 0.19 DS(on PG-TO247 Value Unit 690 ±20 ± 30 208 W °C -55... +150 2008-02-12 ...

Page 2

... V DSS DS GS =25° =150° =20V, V =0V V GSS GS DS =10V, I =13A, V DS(on =25° =150° f=1MHz, open Drain R G Page 2 SPW20N60S5 Value Unit 20 V/ns Values Unit min. typ. max 0.6 K 260 °C Values Unit min. typ. max. 600 - - V - 700 - 3.5 4 ...

Page 3

... GS =0V to 480V o(tr) =350V, V =0/10V d(on =3.6 Ω I =20A d(off =350V, I =20A =350V, I =20A 10V =350V, I =20A V D (plateau) DD oss oss Page 3 SPW20N60S5 Values min. typ. max 3000 - - 1170 - - 160 - - 120 - - 130 195 - 103 - * while V is rising from while V ...

Page 4

... /dt=100A/µ Unit Symbol Thermal capacitance K/W C th1 C th2 C th3 C th4 C th5 C th6 th1 th th1 th2 th,n T Page 4 SPW20N60S5 Values min. typ. max 1 610 = Value typ. 0.0003763 0.001411 0.001931 0.005297 0.012 0.091 E xternal H eatsink case am b Unit µC Unit Ws/K ...

Page 5

... Rev. 2.5 Please note the new package dimensions arccording to PCN 2009-134-A 2 Safe operating area parameter : 100 120 °C 160 Typ. output characteristic parameter 0.01 20 single pulse Page 5 SPW20N60S5 ) DS =25° 0.001 0. 0 =25° µ 20V 15V 12V 11V 10V 2008-02- ...

Page 6

... Typ. drain-source on resistance R DS(on) parameter: T 1.5 mΩ 1.3 9V 1.2 1.1 8. 0.9 0.8 7.5V 0.7 7V 0.6 6.5V 0.5 6V 0.4 0 Typ. transfer characteristics parameter 100 °C 180 Page 6 SPW20N60S5 = =150° ≥ DS(on)max = 10 µs p 25°C 150° 2008-02-12 6V 6.5V 7V 7.5V 8V 8.5V 9V 10V 12V 20V ...

Page 7

... Avalanche energy par 750 mJ 600 550 500 450 400 350 =25°C 300 T j (START) 250 200 150 100 µ Page 7 SPW20N60S5 ) µ SPW20N60S5 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1.2 1 100 120 2008-02- °C 160 ...

Page 8

... Please note the new package dimensions arccording to PCN 2009-134-A 14 Avalanche power losses parameter: E 500 W 300 200 100 0 100 °C 180 Typ oss 14 µ iss oss 400 V 600 V DS Page 8 SPW20N60S5 =1mJ stored energy oss ) DS 0 100 200 300 400 2008-02- 600 V DS ...

Page 9

... Definition of diodes switching characteristics Rev. 2.5 Please note the new package dimensions arccording to PCN 2009-134-A Page 9 SPW20N60S5 2008-02-12 ...

Page 10

G Rev. 2.5 Please note the new package dimensions arccording to PCN 2009-134 ...

Page 11

... If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.5 Please note the new package dimensions arccording to PCN 2009-134-A Page 11 SPW20N60S5 2008-02-12 ...

Page 12

New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet Erratum Data ...

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