2SK3561 Toshiba, 2SK3561 Datasheet - Page 4

• Manufacturer Part Number: 2SK3561
• Description: MOSFET N-CH 500V 8A TO-220SIS
• Manufacturer: Toshiba

Specifications of 2SK3561

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1050pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220 (SIS)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Power Dissipation Pd: 40W
• No. Of Pins: 3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

10000
1000
100
2.0
1.6
1.2
0.8
0.4
10
60
40
20
−80
1
0
0.1
0
0
COMMON SOURCE
V GS = 0 V
f = 1 MHz
Tc = 25°C
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
V GS = 10 V
PULSE TEST
CASE TEMPERATURE Tc (°C)
CASE TEMPERATURE Tc (°C)
−40
40
CAPACITANCE – V
0
1
R
DS (ON)
P
D
I D = 8 A
80
40
– Tc
2
– Tc
80
10
DS
4
120
DS
120
C rss
C oss
C iss
(V)
100
160
160
4
500
400
300
200
100
100
0.1
10
−80
0
1
5
4
3
2
1
0
0
0
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
COMMON SOURCE
TOTAL GATE CHARGE Q
CASE TEMPERATURE Tc (°C)
10
PULSE TEST
−0.2
−40
V DS
PULSE TEST
V DS = 10 V
Tc = 25°C
I D = 1 mA
DYNAMIC INPUT / OUTPUT
10
CHARACTERISTICS
5
−0.4
0
20
I
DR
V DD = 100 V
3
V
V GS
1
th
−0.6
– V
40
– Tc
DS
30
V GS = 0, −1 V
COMMON SOURCE
I D = 8 A
Tc = 25°C
PULSE TEST
200
−0.8
80
400
g
DS
40
−1.0
(nC)
120
(V)
2005-01-26
2SK3561
−1.2
160
50
20
16
12
8
4
0