2SK3561 Toshiba, 2SK3561 Datasheet

MOSFET N-CH 500V 8A TO-220SIS

2SK3561

Manufacturer Part Number
2SK3561
Description
MOSFET N-CH 500V 8A TO-220SIS
Manufacturer
Toshiba
Datasheets

Specifications of 2SK3561

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
1050pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220 (SIS)
Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Power Dissipation Pd
40W
No. Of Pins
3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Switching Regulator Applications
Maximum Ratings
Thermal Characteristics
This transistor is an electrostatic-sensitive device. Please handle with caution.
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Characteristics
DD
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
= 90 V, T
GS
DC
Pulse (t = 1 ms)
= 20 kΩ)
(Ta = 25°C)
ch
DSS
th
= 25°C(initial), L = 8.3 mH, I
= 2.0~4.0 V (V
(Note 1)
(Note 1)
(Note 2)
= 100 μA (V
DS (ON)
Symbol
V
V
V
fs
E
E
T
I
I
T
P
DGR
GSS
DSS
I
DP
AR
DS
AR
stg
| = 6.5S (typ.)
AS
D
ch
R
D
R
DS
2SK3561
Symbol
th (ch-c)
th (ch-a)
= 10 V, I
= 0.75Ω (typ.)
= 500 V)
-55~150
D
Rating
AR
500
500
±30
312
150
= 1 mA)
32
40
8
8
4
1
3.125
= 8 A, R
Max
62.5
G
Unit
= 25 Ω
mJ
mJ
°C/W
°C/W
°C
°C
W
V
V
V
A
A
Unit
Weight : 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
1
1: Gate
2: Drain
3: Source
2-10U1B
SC-67
2005-01-26
2SK3561
2
3
Unit: mm

Related parts for 2SK3561

2SK3561 Summary of contents

Page 1

... DS D Symbol Rating Unit V 500 V DSS V 500 V DGR ± GSS 312 150 ° -55~150 °C stg Symbol Max Unit R 3.125 °C/W th (ch-c) R 62.5 °C/W th (ch- Ω 2SK3561 Unit Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ 2005-01-26 ...

Page 2

... Q gd (Ta = 25°C) Symbol Test Condition ⎯ ⎯ I DRP = DSF /dt = 100 A/ µ 2SK3561 Min Typ. Max Unit ⎯ ⎯ ± 10 µ A ± 30 ⎯ ⎯ V ⎯ ⎯ µ A 100 ⎯ ⎯ 500 V ⎯ 2.0 4.0 V ⎯ Ω 0.75 0.85 ⎯ 3.0 6.5 S ⎯ ...

Page 3

... DRAIN-SOURCE VOLTAGE GATE-SOURCE VOLTAGE (ON) 10 COMMON SOURCE Tc = 25°C PULSE TEST V、15V 0.1 100 0.1 1 DRAIN CURRENT I 3 2SK3561 – COMMON SOURCE 25°C PULSE TEST 5 (V) DS – COMMON SOURCE Tc = 25℃ PULSE TEST (V) GS – 100 (A) D 2005-01-26 ...

Page 4

... COMMON SOURCE PULSE TEST 0 −80 −40 100 0 (V) CASE TEMPERATURE Tc (°C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS 500 V DS 400 300 200 100 0 160 0 10 TOTAL GATE CHARGE Q 4 2SK3561 I – − −1.2 −0.6 −0.8 −1.0 ( – 120 160 100 V 400 12 200 8 ...

Page 5

... R th (ch-c) = 3.125°C/W 10m 100m 1 PULSE WIDTH t ( 500 400 300 200 100 CHANNEL TEMPERATURE (INITIAL − TEST CIRCUIT = 25 Ω 8.3mH 2SK3561 10 – 100 125 150 (°C) B VDSS WAVE FORM ⎛ ⎞ VDSS 2 I ⎜ ⎟ = ⋅ ⋅ ⋅ L Ε AS ⎜ ...

Page 6

... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2SK3561 030619EAA 2005-01-26 ...

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