2SK3561 Toshiba, 2SK3561 Datasheet - Page 5
![MOSFET N-CH 500V 8A TO-220SIS](/photos/22/7/220713/ge3to220fp-40_sml.jpg)
2SK3561
Manufacturer Part Number
2SK3561
Description
MOSFET N-CH 500V 8A TO-220SIS
Manufacturer
Toshiba
Specifications of 2SK3561
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
1050pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220 (SIS)
Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Power Dissipation Pd
40W
No. Of Pins
3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3561
Manufacturer:
TOS
Quantity:
10 000
Company:
Part Number:
2SK3561
Manufacturer:
TOSHIBA
Quantity:
308
Part Number:
2SK3561
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
2SK3561(LBS1LGQ)
Manufacturer:
TOSHIBA
Quantity:
8 703
0.01
100
0.1
10
1
1
I D max (CONTINUOUS) *
CURVES
LINEARLY WITH
TEMPERATURE.
DC OPERATION
※ SINGLE NONREPETITIVE PULSE
DRAIN-SOURCE VOLTAGE V
I D max (PULSED) *
Tc = 25°C
SAFE OPERATING AREA
MUST
0.001
0.01
0.1
10
Tc=25℃
10μ
10
1
BE
INCREASE
0.02
0.05
0.1
DERATED
Duty=0.5
0.2
1 ms *
0.01
IN
100μ
100
V DSS max
100 µs *
DS
SINGLE PULSE
1000
(V)
1m
PULSE WIDTH t
r
th
10m
– t
5
w
R
V
DD
G
w
= 25 Ω
= 90 V, L = 8.3mH
500
400
300
200
100
(s)
− 15 V
0
100m
15 V
25
TEST CIRCUIT
P DM
CHANNEL TEMPERATURE (INITIAL)
50
Duty = t/T
R th (ch-c) = 3.125°C/W
t
1
T
75
E
T
AS
ch
Ε AS
– T
V
(°C)
DD
=
ch
100
WAVE FORM
B
10
1
2
VDSS
I
⋅
AR
L
⋅
2 I
⋅
125
⎛
⎜
⎜
⎝
B VDSS
V
DS
2005-01-26
B VDSS
2SK3561
150
−
V DD
⎞
⎟
⎟
⎠