IRFR3418PBF International Rectifier, IRFR3418PBF Datasheet - Page 3

• Manufacturer Part Number: IRFR3418PBF
• Description: MOSFET N-CH 80V 70A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3418PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 94nC @ 10V
• Input Capacitance (ciss) @ Vds: 3510pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
0.001
1000.00
1000
0.01
100.00
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
0.1
10.00
10
1.00
0.10
0.01
1
0.1
5
T J = 175°C
V DS , Drain-to-Source Voltage (V)
6
V GS , Gate-to-Source Voltage (V)
T J = 25°C
7
1
8
6.0V
9
10
20µs PULSE WIDTH
Tj = 25°C
10
V DS = 25V
20µs PULSE WIDTH
11
TOP
BOTTOM
100
12
13
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
14
1000
15
1000
100
Fig 2. Typical Output Characteristics
0.1
10
2.5
2.0
1.5
1.0
0.5
0.0
1
Fig 4. Normalized On-Resistance
0.1
-60 -40 -20 0
I =
D
70A
V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
T
Vs. Temperature
J
, Junction Temperature (°C)
1
20 40 60 80 100 120 140 160 180
6.0V
10
20µs PULSE WIDTH
Tj = 175°C
TOP
BOTTOM
100
V
°
GS
=
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
10V
3
1000