IXTA80N10T7 IXYS, IXTA80N10T7 Datasheet - Page 4

MOSFET N-CH 100V 80A TO-263-7

IXTA80N10T7

Manufacturer Part Number
IXTA80N10T7
Description
MOSFET N-CH 100V 80A TO-263-7
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTA80N10T7

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
3040pF @ 25V
Power - Max
230W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.014 Ohms
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
80 A
Power Dissipation
230 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
80
Rds(on), Max, Tj=25°c, (?)
0.0140
Ciss, Typ, (pf)
3040
Qg, Typ, (nc)
60
Trr, Typ, (ns)
100
Trr, Max, (ns)
-
Pd, (w)
230
Rthjc, Max, (k/w)
0.65
Package Style
TO-263 (7-lead)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
250
225
200
175
150
125
100
100
140
120
100
75
50
25
10
80
60
40
20
0
0
0.4
0
4
0.5
f = 1 MHz
4.5
5
Fig. 9. Forward Voltage Drop of
0.6
T
J
10
= 150ºC
5
0.7
- 40ºC
Fig. 7. Input Admittance
Fig. 11. Capacitance
25ºC
T
J
Intrinsic Diode
= 150ºC
0.8
15
5.5
V
V
V
DS
SD
GS
0.9
- Volts
- Volts
- Volts
20
6
C iss
C oss
C rss
1
T
J
= 25ºC
25
6.5
1.1
1.2
30
7
1.3
35
7.5
1.4
40
1.5
8
1.00
0.10
0.01
80
70
60
50
40
30
20
10
0
10
0.0001
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
D
G
20
DS
= 25A
= 10mA
Fig. 12. Maximum Transient Thermal
= 50V
10
0.001
40
Fig. 8. Transconductance
Q
Pulse Width - Seconds
Fig. 10. Gate Charge
G
20
I
60
- NanoCoulombs
D
0.01
- Amperes
Impedance
80
30
T
J
IXTA80N10T7
0.1
= - 40ºC
100
150ºC
25ºC
40
120
1
50
140
10
160
60

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