IXTA80N10T7 IXYS, IXTA80N10T7 Datasheet - Page 2

• Manufacturer Part Number: IXTA80N10T7
• Description: MOSFET N-CH 100V 80A TO-263-7
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTA80N10T7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 3040pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.014 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 80 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 80
• Rds(on), Max, Tj=25°c, (?): 0.0140
• Ciss, Typ, (pf): 3040
• Qg, Typ, (nc): 60
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 230
• Rthjc, Max, (k/w): 0.65
• Package Style: TO-263 (7-lead)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
Source-Drain Diode
Symbol
T
I
I
V
t
Notes: 1.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
SM
d(off)
S
d(on)
r
f
rr
fs
J
iss
oss
rss
thJC
SD
g(on)
gs
gd
The product presented herein is under development.
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Pulse width limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 25 A, V
= 25 A, -di/dt = 100 A/μs
= 25 V, V
= 10 V; I
= 15 Ω (External)
= 10 V, V
PRELIMINARY TECHNICAL INFORMATION
= 0 V
= 0 V, V
= 10 V, V
GS
DS
D
DS
GS
DS
= 40 A, Note 1
= 0 V, Note 1
= 25 V, f = 1 MHz
= 0.5 V
= 0 V
= 0.5 V
4,835,592
4,850,072
4,881,106
DSS
DSS
JM
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 25 A
= 10 A
5,049,961
5,063,307
5,187,117
The Technical Specifications
Min.
Min.
5,237,481
5,381,025
5,486,715
33
Characteristic Values
Characteristic Values
3040
Typ.
Typ.
420
100
55
90
31
54
40
48
60
21
15
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
0.65 °C/W
220
1.1
80
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
ns
S
V
A
A
TO-263 (7-lead) (IXTA 7) Outline
6,683,344
6,710,405B2
6,710,463
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
6,727,585
6,759,692
6771478 B2
IXTA80N10T7
7,005,734 B2
7,063,975 B2
7,071,537