IXTA80N10T7 IXYS, IXTA80N10T7 Datasheet

MOSFET N-CH 100V 80A TO-263-7

IXTA80N10T7

Manufacturer Part Number
IXTA80N10T7
Description
MOSFET N-CH 100V 80A TO-263-7
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTA80N10T7

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
3040pF @ 25V
Power - Max
230W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.014 Ohms
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
80 A
Power Dissipation
230 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
80
Rds(on), Max, Tj=25°c, (?)
0.0140
Ciss, Typ, (pf)
3040
Qg, Typ, (nc)
60
Trr, Typ, (ns)
100
Trr, Max, (ns)
-
Pd, (w)
230
Rthjc, Max, (k/w)
0.65
Package Style
TO-263 (7-lead)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS CORPORATION All rights reserved
DM
D25
AR
GSS
DSS
L
SOLD
DGR
D
J
JM
stg
GS(th)
DSS
GSM
AS
DS(on)
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Test Conditions
V
V
V
V
V
S
V
C
C
C
C
C
GS
J
J
J
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 175°C, R
= 25°C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
TM
DSS
, I
D
D
= 250 μA
D
= 100 μA
= 25 A, Note 1
G
DS
= 15 Ω
= 0 V
Preliminary Technical Information
GS
= 1 MΩ
DD
T
≤ V
J
= 150°C
DSS
IXTA80N10T7
JM
100
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
11.5
Typ.
± 30
100
100
220
400
230
300
260
175
80
25
± 200
3
3
150
Max.
4.5
14
5
V/ns
mJ
nA
μA
°C
°C
°C
°C
°C
μA
W
V
V
V
V
A
A
A
g
V
TO-263 (7-lead) (IXTA..7)
Features
Advantages
Applications
Pin-out:1 - Gate
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Electronic Valve Train Systems
High Current Switching
High Voltage Synchronous Recifier
Distributed Power Architechtures
Systems
Applications
V
I
R
D25
1
and VRMs
DSS
DS(on)
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
7
= 100
=
≤ ≤ ≤ ≤ ≤
80
14 mΩ Ω Ω Ω Ω
DS99706 (11/06)
(TAB)
A
V

Related parts for IXTA80N10T7

IXTA80N10T7 Summary of contents

Page 1

... ± GSS DSS DS DSS Note 1 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTA80N10T7 Maximum Ratings 100 = 1 MΩ 100 GS ± 220 JM 25 400 ≤ DSS 230 -55 ... +175 175 -55 ... +175 300 260 3 Characteristic Values Min. Typ. 100 2.5 ± ...

Page 2

... DSS D 15 Characteristic Values Min. Typ. JM 100 The Technical Specifications 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA80N10T7 TO-263 (7-lead) (IXTA 7) Outline Max Pins Gate Source 4 - Drain 0.65 °C/W 5,6,7 - Source Tab (8) - Drain Max 220 A 1.1 ...

Page 3

... Value 175º 25ºC J 150 175 200 225 250 IXTA80N10T7 Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 80A ...

Page 4

... V - Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 6 25º 1.1 1.2 1.3 1.4 1.5 1.00 C iss 0.10 C oss C rss 0. IXTA80N10T7 Fig. 8. Transconductance 40ºC J 25ºC 150º 100 I - Amperes D Fig. 10. Gate Charge 50V 25A 10mA ...

Page 5

... V = 10V 140 50V 66 130 120 62 58 110 100 125º 25º IXTA80N10T7 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Ω 10V 50V Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature - - - - d(off) =15 Ω 10V 10A 50V 30A D 25 ...

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