IRF3000PBF International Rectifier, IRF3000PBF Datasheet - Page 5

• Manufacturer Part Number: IRF3000PBF
• Description: MOSFET N-CH 300V 1.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3000PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 960mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 730pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3000PBF

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0.01
100
2.0
1.6
1.2
0.8
0.4
0.0
0.1
10
0.00001
1
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature
C
Ambient Temperature
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
( C)
°
125
t , Rectangular Pulse Duration (sec)
1
150
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.1
t
d(on)
1. Duty factor D =
2. Peak T
Notes:
t
r
≤ 0.1 %
≤ 1
1
J
IRF3000PbF
= P
DM
x Z
t / t
1
t
thJA
d(off)
P
2
DM
+ T
10
t
f
A
t
1
t
2
+
-
5
100