IRF3000PBF International Rectifier, IRF3000PBF Datasheet - Page 4

• Manufacturer Part Number: IRF3000PBF
• Description: MOSFET N-CH 300V 1.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3000PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 960mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 730pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3000PBF

IRF3000PbF
4
100000
100.0
10000
10.0
1000
100
1.0
0.1
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0.2
1
T J = 150°C
Drain-to-Source Voltage
0.4
V SD , Source-toDrain Voltage (V)
V DS , Drain-to-Source Voltage (V)
Forward Voltage
0.6
V GS = 0V,
C iss
SHORTED
C rss
C oss = C ds + C gd
10
0.8
T J = 25°C
= C gd
1.0
Coss
Crss
= C gs + C gd ,
Ciss
1.2
f = 1 MHZ
100
1.4
V GS = 0V
1.6
C ds
1.8
1000
100
0.1
20
16
12
10
8
4
0
1
Fig 8. Maximum Safe Operating Area
0
Fig 6. Typical Gate Charge Vs.
1
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 0.96A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
5
Q G Total Gate Charge (nC)
10
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 240V
VDS= 150V
VDS= 60V
100
15
FOR TEST CIRCUIT
SEE FIGURE 14
20
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10msec
100µsec
1msec
1000
25
10000
30