IRF3000PBF International Rectifier, IRF3000PBF Datasheet - Page 2

• Manufacturer Part Number: IRF3000PBF
• Description: MOSFET N-CH 300V 1.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3000PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 960mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 730pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3000PBF

Diode Characteristics
IRF3000PbF
Dynamic @ T
Avalanche Characteristics
Static @ T
V
∆V
R
V
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
I
I
V
t
Q
I
DSS
GSS
AR
SM
d(on)
r
d(off)
f
S
rr
fs
AS
DS(on)
(BR)DSS
GS(th)
SD
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
2
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
300
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
–––
–––
–––
–––
–––
0.38
0.34 0.40
–––
–––
–––
–––
–––
––– -100
–––
730
100
940
–––
–––
–––
250
4.7
8.2
7.2
86
22
11
23
23
20
39
87
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
130
380
5.0
7.1
1.5
25
17
1.6
13
33
V/°C
µA
nA
nC
ns
nC
pF
ns
Ω
V
V
S
V
Typ.
–––
–––
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs ƒ
Reference to 25°C, I
I
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 0.96A
= 0.96A
= 25°C, I
= 25°C, I
= 2.2Ω
= 0V, I
= 10V, I
= V
= 300V, V
= 240V, V
= 30V
= -30V
= 50V, I
= 240V
= 10V,
= 150V
= 10V ƒ
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 0.96A, V
= 0.96A
= 0.96A
= 250µA
= 0.96A
GS
GS
= 0V to 240V …
Max.
= 1.0V, ƒ = 1.0MHz
= 240V, ƒ = 1.0MHz
1.9
47
= 0V
= 0V, T
D
www.irf.com
= 1mA ƒ
GS
ƒ
J
G
= 150°C
= 0V ƒ
Units
mJ
A
D
S