IRF3709ZCS International Rectifier, IRF3709ZCS Datasheet - Page 7

• Manufacturer Part Number: IRF3709ZCS
• Description: MOSFET N-CH 30V 87A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3709ZCS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 87A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2130pF @ 15V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3709ZCS

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+
R
-
D.U.T
ƒ
Fig 17.
+
-
•
•
•
•
SD
•
•
•
90%
V
10%
V
Fig 18a. Switching Time Test Circuit
DS
Fig 18b. Switching Time Waveforms
GS
-
„
G
HEXFET
t
d(on)
+
Duty Factor < 0.1%
V
Pulse Width < 1µs
V
GS
t
®
r
+
Power MOSFETs
-
V
Re-Applied
Voltage
DS
Reverse
Recovery
Current
t
d(off)
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
D.U.T
L
P.W.
t
D
SD
f
= 5V for Logic Level Devices
DS
V
Waveform
Waveform
DD
+
-
Ripple ≤ 5%
for N-Channel
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
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