IRF3709ZCS International Rectifier, IRF3709ZCS Datasheet - Page 4
![MOSFET N-CH 30V 87A D2PAK](/photos/5/40/54080/21-d2pak_smd-220_sml.jpg)
IRF3709ZCS
Manufacturer Part Number
IRF3709ZCS
Description
MOSFET N-CH 30V 87A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF3709ZCS.pdf
(12 pages)
Specifications of IRF3709ZCS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.3 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
87A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 4.5V
Input Capacitance (ciss) @ Vds
2130pF @ 15V
Power - Max
79W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF3709ZCS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF3709ZCS
Manufacturer:
IR
Quantity:
12 500
1000.00
100.00
4
10.00
10000
1000
1.00
100
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
C oss
C iss
C rss
Forward Voltage
T J = 25°C
1.0
f = 1 MHZ
10
1.5
V GS = 0V
2.0
100
2.5
10000
1000
100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.1
10
Fig 8. Maximum Safe Operating Area
1
0
0
Fig 6. Typical Gate Charge vs.
I D = 17A
Tc = 25°C
Tj = 175°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
5
Q G Total Gate Charge (nC)
1
V DS = 24V
V DS = 15V
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
10
15
www.irf.com
1msec
10msec
100µsec
100
20
1000
25