IRF3709ZCS International Rectifier, IRF3709ZCS Datasheet - Page 3

• Manufacturer Part Number: IRF3709ZCS
• Description: MOSFET N-CH 30V 87A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3709ZCS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 87A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2130pF @ 15V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3709ZCS

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1000
1000
100
100
0.1
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
0.1
0
TOP
BOTTOM
1
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
1
T J = 25°C
3
3.0V
V DS = 15V
≤60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
4
5
10
T J = 175°C
6
7
100
8
1000
100
2.0
1.5
1.0
0.5
10
1
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
-60 -40 -20 0
0.1
I D = 42A
V GS = 10V
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
20 40 60 80 100 120 140 160 180
1
≤ 60µs PULSE WIDTH
Tj = 175°C
3.0V
10
3
100