IRLR3714Z International Rectifier, IRLR3714Z Datasheet - Page 7
IRLR3714Z
Manufacturer Part Number
IRLR3714Z
Description
MOSFET N-CH 20V 37A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLR3714ZTR.pdf
(12 pages)
Specifications of IRLR3714Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
37A
Vgs(th) (max) @ Id
2.55V @ 250µA
Gate Charge (qg) @ Vgs
7.1nC @ 4.5V
Input Capacitance (ciss) @ Vds
560pF @ 10V
Power - Max
35W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLR3714Z
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Company
Part Number
Manufacturer
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+
R
-
D.U.T
Fig 15.
+
-
•
•
•
•
SD
•
•
•
Vgs(th)
Qgs1 Qgs2
Vds
Fig 16. Gate Charge Waveform
-
G
HEXFET
+
V
Qgd
®
+
Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Qgodr
V
P.W.
SD
= 5V for Logic Level Devices
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
Vgs
dv/dt
Forward Drop
di/dt
Id
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
7