IRLR3714Z International Rectifier, IRLR3714Z Datasheet - Page 5

• Manufacturer Part Number: IRLR3714Z
• Description: MOSFET N-CH 20V 37A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR3714Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 37A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 7.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 560pF @ 10V
• Power - Max: 35W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLR3714Z

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0.001
0.01
40
30
20
10
0.1
10
0
Fig 9. Maximum Drain Current vs.
1
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
Case Temperature
50
0.20
0.10
0.05
0.02
0.01
T C , Case Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
LIMITED BY PACKAGE
100
1E-005
125
150
t 1 , Rectangular Pulse Duration (sec)
175
0.0001
τ
J
τ
Fig 10. Threshold Voltage vs. Temperature
J
τ
1
Ci= τi/Ri
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
τ
1
Ci
-75
i/Ri
R
1
R
1
-50
τ
2
τ
R
2
-25
2
R
2
T J , Temperature ( °C )
R
τ
0
3
3
R
τ
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
3
0.001
25
τ
C
τ
Ri (°C/W) τi (sec)
1.2525
2.423
0.6041
50
I D = 250µA
75
100
0.00098
0.00015
0.00984
125
5
150
0.01