IRLR3714Z International Rectifier, IRLR3714Z Datasheet - Page 3

• Manufacturer Part Number: IRLR3714Z
• Description: MOSFET N-CH 20V 37A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR3714Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 37A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 7.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 560pF @ 10V
• Power - Max: 35W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLR3714Z

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1000
1000
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
100
0.1
10
10
1
1
0.1
2.0
0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
4.0
1
1
3.0V
6.0
60µs PULSE WIDTH
Tj = 25°C
T J = 25°C
V DS = 10V
60µs PULSE WIDTH
10
10
T J = 175°C
8.0
V
100
100
10.0
2.0
1.5
1.0
0.5
1000
100
10
-60 -40 -20
1
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
0.1
0
I D = 30A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
V
0
20
1
1
3.0V
40
60µs PULSE WIDTH
Tj = 175°C
60
80 100 120 140 160
10
10
3
100
100