STP80NE06-10 STMicroelectronics, STP80NE06-10 Datasheet - Page 4

• Manufacturer Part Number: STP80NE06-10
• Description: MOSFET N-CH 60V 80A TO-220
• Manufacturer: STMicroelectronics

Specifications of STP80NE06-10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 10000pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2778-5

STP80NE06-10
Table 11. Source Drain Diode
Note: 1. Pulse width limited by safe operating area
Figure 3. Safe Operating Area
Figure 5. Output Characteristics
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Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
rr
(2)
(1)
Source-drain Current
Source-drain Current
(pulsed)
ForwardM On Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Parameter
I
I
V
(see test circuit, Figure 18)
SD
SD
DD
= 80 A; V
= 80 A; di/dt = 100 A/µs
= 30 V; T
Test Conditions
GS
j
= 150 °C
= 0
Figure 4. Thermal Impedance
Figure 6. Transfer Characteristics
Min.
Typ.
100
0.4
8
Max.
320
1.5
80
Unit
µC
ns
A
A
V
A