STP80NE06-10 STMicroelectronics, STP80NE06-10 Datasheet - Page 2

• Manufacturer Part Number: STP80NE06-10
• Description: MOSFET N-CH 60V 80A TO-220
• Manufacturer: STMicroelectronics

Specifications of STP80NE06-10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 10000pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2778-5

STP80NE06-10
Table 3. Absolute Maximum Ratings
Note: 1. Pulse width limited by safe operating area
Table 4. Thermal Data
Table 5. Avalanche Characteristics
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Symbol
Symbol
Symbol
dv/dt
R
R
I
V
DM
thj-case
thj-amb
2. I
V
V
E
P
T
I
DGR
I
I
AR
T
T
GS
DS
stg
AS
D
D
tot
j
l
(1)
SD
(2)
≤80 A, di/dt ≤ 300 A/µs, V
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (cont.) at T
Drain Current (cont.) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
j
= 25 °C; I
DD
≤ V
D
C
GS
(BR)DSS
= I
= 25 °C
GS
j
C
C
max, δ < 1%)
AR
= 20 kΩ)
Parameter
Parameter
Parameter
= 0)
= 25 °C
= 100 °C
; V
, T
DD
j
≤ T
= 30 V)
JMAX
Max
Max
-65 to 175
Max Value
Value
Value
± 20
62.5
320
150
175
300
250
60
60
80
57
80
1
7
1
W°/C
°C/W
°C/W
V/ns
Unit
Unit
Unit
mJ
°C
°C
°C
W
V
V
V
A
A
A
A