IRF640 STMicroelectronics, IRF640 Datasheet - Page 8
IRF640
Manufacturer Part Number
IRF640
Description
MOSFET N-CH 200V 18A TO-220
Manufacturer
STMicroelectronics
Series
MESH OVERLAY™r
Datasheet
1.IRF640.pdf
(14 pages)
Specifications of IRF640
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
72nC @ 10V
Input Capacitance (ciss) @ Vds
1560pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2759-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF640
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
IRF640-TSTU
Manufacturer:
SAMSUNG
Quantity:
467
Company:
Part Number:
IRF640A
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF640B
Manufacturer:
N/A
Quantity:
20 000
Electrical characteristics
IRF640 - IRF640FP
Figure 13. Source-drain diode forward
characteristics
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