IRF640 STMicroelectronics, IRF640 Datasheet - Page 6

• Manufacturer Part Number: IRF640
• Description: MOSFET N-CH 200V 18A TO-220
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of IRF640

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 1560pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2759-5

Electrical characteristics
2.1
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Figure 1.
Figure 3.
Figure 5.
Safe operating area for TO-220
Electrical characteristics (curves)
Safe operating area for TO-220/FP
Output characterisics
Figure 2.
Figure 4.
Figure 6.
Thermal impedance for TO-220
Thermal impedance for TO-220/FP
Transfer characteristics
IRF640 - IRF640FP