IRF730 STMicroelectronics, IRF730 Datasheet - Page 5

• Manufacturer Part Number: IRF730
• Description: MOSFET N-CH 400V 5.5A TO-220
• Manufacturer: STMicroelectronics

Specifications of IRF730

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2736-5

IRF730
Table 6.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
V
SD
SD
DD
= 5.5A, V
= 7A, di/dt = 100A/µs,
= 100V, T
Test conditions
GS
j
= 150°C
= 0
Min.
Electrical characteristics
Typ.
280
1.4
10
Max.
1.6
24
6
Unit
µC
ns
A
A
V
A
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